ADPA1116ACGZN-R7

Analog Devices
584-ADPA1116ACGZN-R7
ADPA1116ACGZN-R7

Mfr.:

Description:
RF Amplifier GaN Wideband Power Amplifier ICs

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Analog Devices ADPA1116ACGZN-R7

Availability

Stock:
Non-Stocked
Factory Lead Time:
10 Weeks Estimated factory production time.
Minimum: 500   Multiples: 500
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 500)
€318.99 €159,495.00

Product Attribute Attribute Value Select Attribute
Analog Devices Inc.
Product Category: RF Amplifier
300 MHz to 6 GHz
28 V
32.5 dB
Power Amplifiers
SMD/SMT
LFCSP-32
GaN
- 40 C
+ 85 C
ADPA1116
Reel
Brand: Analog Devices
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Development Kit: EVAL-ADPA1116
Number of Channels: 1 Channel
Pd - Power Dissipation: 28.7 W
Product Type: RF Amplifier
Factory Pack Quantity: 500
Subcategory: Wireless & RF Integrated Circuits
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Attributes selected: 0

Datasheet

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TARIC:
8542330000
CAHTS:
8542330000
USHTS:
8542330001
MXHTS:
8542330299
ECCN:
EAR99

ADPA1116 GaN Power Amplifiers

Analog Devices ADPA1116 GaN Power Amplifiers feature a 39.5dBm saturated output power (POUT) power added efficiency (PAE) of 40% and a power gain of 23.5dB typical from 0.5GHz to 5GHz at an input power (PIN) of 16.0dBm. The RF input and output are internally matched and AC-coupled. A drain bias voltage of 28V is applied to the VDD1 and VDD2 pins, which have integrated bias inductors. The drain current is set using a negative voltage to the VGG1 pin. The ADPA1116 is manufactured using a gallium nitride (GaN) process and is available in a 32-lead chip scale package. The ADI ADPA1116 amps are specified for operation from -40°C to +85°C.

RF, Microwave & Millimeter Wave ADI SLP


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