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IXTK400N15X4

Name: IXYS IXTK400N15X4
Brand: IXYS
SKU: 747-IXTK400N15X4
Price: 49.86 EUR
Availability: InStock

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Mouser No:

747-IXTK400N15X4

Mfr. No:

IXTK400N15X4

Mfr.:

IXYS

Description:

MOSFETs TO264 150V 400A N-CH 4CLASS

Datasheet:

IXTK400N15X4 Datasheet

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In Stock: 1,534

Stock:: 1,534 Can Dispatch Immediately

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Factory Lead Time:: 41 Weeks Estimated factory production time for quantities greater than shown.

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Qty.	Unit Price	Ext. Price
	€49.86	€49.86
	€44.42	€444.20

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-264-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	400 A
Rds On - Drain-Source Resistance:	3.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	430 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	1.5 kW
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	8 ns
Forward Transconductance - Min:	100 S
Product Type:	MOSFETs
Rise Time:	22 ns
Series:	X4-Class
Factory Pack Quantity:	25
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	180 ns
Typical Turn-On Delay Time:	40 ns
Unit Weight:	10 g

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Datasheet

IXTK400N15X4 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Electric Vehicle Charging Solutions

Littelfuse Electric Vehicle (EV) Charging Solutions allow designers to select the ideal solution to ensure their EV charging units are functional and safe. Off-board EV charging stations operate in harsh environments subject to extreme heat and cold, rain, snow and lightning strikes. Littelfuse products protect against these hazards, minimising the risk of faults.

Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low R_DS(on) and low Q_g in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

X4-Class 135V-200V Power MOSFETs

IXYS X4-Class 135V-200V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance R_DS(on) and gate charge Q_g. A low on-state resistance reduces the conduction losses and lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads and lowers gate drive requirements. These MOSFETs are also avalanche-rated and exhibit a superior dv/dt performance. Due to its positive temperature coefficient of on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.