IXTP4N70X2M

IXYS
747-IXTP4N70X2M
IXTP4N70X2M

Mfr.:

Description:
MOSFETs TO220 700V 4A N-CH X4CLASS

Datasheet:
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In Stock: 95

Stock:
95 Can Dispatch Immediately
Factory Lead Time:
41 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€3.69 €3.69
€1.89 €18.90
€1.69 €169.00
€1.59 €795.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
700 V
4 A
850 mOhms
- 30 V, 30 V
2.5 V
- 55 C
+ 150 C
30 W
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 28 ns
Forward Transconductance - Min: 2.6 S
Product Type: MOSFETs
Rise Time: 27 ns
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 66 ns
Typical Turn-On Delay Time: 20 ns
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Datasheet

PCN

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TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

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X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

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