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BSC010NE2LSI

Name: Infineon BSC010NE2LSI
Brand: Infineon Technologies
SKU: 726-BSC010NE2LSI
Price: 2.01 EUR
Availability: InStock

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Mouser No:

726-BSC010NE2LSI

Mfr. No:

BSC010NE2LSI

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

BSC010NE2LSI Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies BSC010NE2LSI

In Stock: 5,253

Stock:: 5,253 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€2.01	€2.01
	€1.29	€12.90
	€0.894	€89.40
	€0.753	€376.50
	€0.641	€641.00
Full Reel (Order in multiples of 5000)
	€0.599	€2,995.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

BSC010NE2LSIATMA1

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

€1.95

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	1.05 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	59 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	4.6 ns
Forward Transconductance - Min:	80 S
Product Type:	MOSFETs
Rise Time:	6.2 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	6.3 ns
Part # Aliases:	BSC1NE2LSIXT SP000854376 BSC010NE2LSIATMA1
Unit Weight:	104.400 mg

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

20V-60V OptiMOS Power MOSFETs

Infineon's 20V-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar microinverter), power supply (e.g. server and telecom), and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency, and lower cost.