FM25L04B-DG

Infineon Technologies
877-FM25L04B-DG
FM25L04B-DG

Mfr.:

Description:
F-RAM 4Kb Serial SPI 3V FRAM

ECAD Model:
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In Stock: 1,814

Stock:
1,814 Can Dispatch Immediately
Factory Lead Time:
3 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€1.61 €1.61
€1.51 €15.10
€1.46 €36.50
€1.42 €71.00
€1.38 €138.00
€1.35 €337.50
€1.32 €660.00
€1.13 €1,130.00
€1.12 €2,800.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
4 kbit
SPI
20 MHz
512 k x 8
DFN-8
2.7 V
3.6 V
- 40 C
+ 85 C
FM25L04B-DG
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 3.3 V
Product Type: FRAM
Factory Pack Quantity: 1620
Subcategory: Memory & Data Storage
Unit Weight: 50.300 mg
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TARIC:
8542329000
CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

WICED IOT Platform

Infineon Technologies WICED IoT Platform is a portfolio of wireless technologies ranging from Wi-Fi® and BLUETOOTH® to microcontrollers (MCU) built specifically for the IoT. These design-ready, secure products streamline and simplify designs. Infineon has over 20 ecosystem partners working to crack persistent design problems.  

Serial FRAM Nonvolatile Memory Devices

Infineon Technologies Serial F-RAM (ferroelectric RAM) memories combine the nonvolatile data storage capability of ROM with the fast speeds of RAM. Serial F-RAM features a variety of interface and density options, including SPI and I2C interfaces, industry-standard packages, and densities ranging from 4KB to 4MB. Infineon Serial F-RAMs have three distinct advantages over other nonvolatile memory technologies: fast write speed, extremely high endurance, and low power consumption. Serial F-RAMs provide 100 trillion cycle endurance, exceeding the 1 million write cycle limitation of EEPROM. This eliminates the need for wear leveling to support a product over its lifespan.