It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SH63N65DM6AG

Name: STMicroelectronics SH63N65DM6AG
Brand: STMicroelectronics
SKU: 511-SH63N65DM6AG
Price: 21.59 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-SH63N65DM6AG

Mfr. No:

SH63N65DM6AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET

Complete Your Design

Datasheet:

SH63N65DM6AG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics SH63N65DM6AG

In Stock: 184

Stock:: 184

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 200
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 200)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€21.59	€21.59
	€16.59	€165.90
	€10.84	€1,084.00
Full Reel (Order in multiples of 200)
	€10.84	€2,168.00
	€10.32	€4,128.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	ACEPACK SMIT-9
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	53 A
Rds On - Drain-Source Resistance:	64 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	80 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	424 W
Channel Mode:	Enhancement
Qualification:	AQG 324
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	8 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	8 ns
Factory Pack Quantity:	200
Subcategory:	Transistors
Typical Turn-Off Delay Time:	68 ns
Typical Turn-On Delay Time:	28 ns
Unit Weight:	8.200 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SH63N65DM6AG Datasheet (PDF)

PCN

Product Change Notification (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

SH63N65DM6AG Power MOSFET

STMicroelectronics SH63N65DM6AG Power MOSFET is an automotive-grade N-channel MDmesh DM6 half‑bridge topology power MOSFET offering 650V blocking voltage. This power MOSFET is AQG 324 qualified and comes in an ACEPACK SMIT low inductance package. The SH63N65DM6AG power MOSFET features very low switching energies, low thermal resistance, and a 3.4kV_rms/min isolation rating. This power MOSFET has a dice-on Direct Bond Copper (DBC) substrate that helps the package offer low thermal resistance coupled with an isolated top-side thermal pad. The SH63N65DM6AG MOSFET comes in a package with high design flexibility enabling several configurations, including phase-legs, boost, and single-switch through different combinations of internal power switches. This power MOSFET is ideal for switching applications.