STF10N105K5

STMicroelectronics
511-STF10N105K5
STF10N105K5

Mfr.:

Description:
MOSFETs N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-220FP package
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Datasheet:
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In Stock: 990

Stock:
990
Can Dispatch Immediately
On Order:
1,000
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€3.09 €3.09
€1.46 €14.60
€1.31 €131.00
€1.15 €575.00
€1.14 €1,140.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
Through Hole
TO-220-3
N-Channel
1 Channel
1.05 kV
6 A
1 Ohms
- 30 V, 30 V
3 V
21.5 nC
- 55 C
+ 150 C
30 W
Enhancement
MDmesh
Tube
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: CN
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 21.5 ns
Product Type: MOSFETs
Rise Time: 8 ns
Series: STF10N105K5
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 19 ns
Unit Weight: 2 g
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Attributes selected: 0

Datasheet

PCN

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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