STF80N600K6

STMicroelectronics
511-STF80N600K6
STF80N600K6

Mfr.:

Description:
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET

Lifecycle:
New Product:
New from this manufacturer.
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
Delivery Restriction:
 Mouser does not presently sell this product in your region.
RoHS:  
Si
Through Hole
TO-220FP-3
N-Channel
1 Channel
800 V
7 A
600 mOhms
- 30 V, 30 V
4 V
10.7 nC
- 55 C
+ 150 C
23 W
Enhancement
MDmesh
Tube
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 12.6 ns
Product Type: MOSFETs
Rise Time: 4.1 ns
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 28.2 ns
Typical Turn-On Delay Time: 9 ns
Unit Weight: 1.690 g
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.