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STGWA20H65DFB2

Name: STMicroelectronics STGWA20H65DFB2
Brand: STMicroelectronics
SKU: 511-STGWA20H65DFB2
Price: 2.8 EUR
Availability: InStock

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Mouser No:

511-STGWA20H65DFB2

Mfr. No:

STGWA20H65DFB2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l

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Datasheet:

STGWA20H65DFB2 Datasheet (PDF)

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In Stock: 915

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€2.80	€2.80
	€1.73	€17.30
	€1.16	€116.00
	€1.07	€642.00
	€0.937	€1,124.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	40 A
Pd - Power Dissipation:	147 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6.100 g

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Datasheet

STGWA20H65DFB2 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

STGWA20H65DFB2 HB2 IGBT

STMicroelectronics STGWA20H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium V_CE(sat) at low current values and reduced switching energy. The STGWA20H65DFB2 HB2 IGBT features a low V_CE(sat) of 1.65V (typical) at an I_C of 20A.

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.