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STP65N150M9

Name: STMicroelectronics STP65N150M9
Brand: STMicroelectronics
SKU: 511-STP65N150M9
Price: 4 EUR
Availability: InStock

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Mouser No:

511-STP65N150M9

Mfr. No:

STP65N150M9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET

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Datasheet:

STP65N150M9 Datasheet (PDF)

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In Stock: 101

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€4.00	€4.00
	€2.22	€22.20
	€1.90	€190.00
	€1.68	€840.00
	€1.54	€1,540.00
	€1.50	€3,000.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	150 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	32 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	140 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	10 ns
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	MDmesh M9
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	2 g

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Datasheet

STP65N150M9 Datasheet (PDF)

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Super-junction Power MOSFETs for best efficiency (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

STP65N150M9 Power MOSFET

STMicroelectronics STP65N150M9 Power MOSFET is based on super-junction MDmesh M9 technology. The device is suitable for medium/high voltage MOSFETs featuring very low R_DS(on) per area. The silicon-based M9 technology benefits from a multi-drain manufacturing process, allowing an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values among all silicon-based fast-switching super-junction Power MOSFETs. This makes it ideal for applications that require superior power density and outstanding efficiency.