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CSD18535KTTT

Name: Texas Instruments CSD18535KTTT
Brand: Texas Instruments
SKU: 595-CSD18535KTTT
Price: 4.55 EUR
Availability: InStock

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Mouser No:

595-CSD18535KTTT

Mfr. No:

CSD18535KTTT

Mfr.:

Texas Instruments

Description:

MOSFETs 60-V N channel NexF ET power MOSFET si A A 595-CSD18535KTT

Datasheet:

CSD18535KTTT Datasheet

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Learn more about Texas Instruments CSD18535KTTT

In Stock: 60

Stock:: 60 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 50)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€4.55	€4.55
	€2.37	€23.70
Full Reel (Order in multiples of 50)
	€2.37	€118.50
	€1.94	€194.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD18535KTT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

€3.57

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD18535KTT

Description:

MOSFETs 60-V N channel NexF ET power MOSFET si A A 595-CSD18535KTTT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Series:	CSD18535KTT
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Number of Channels:	1 Channel
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	CN
Country of Origin:	CN
Fall Time:	3 ns
Forward Transconductance - Min:	263 S
Id - Continuous Drain Current:	200 A
Moisture Sensitive:	Yes
Pd - Power Dissipation:	300 W
Product Type:	MOSFETs
Qg - Gate Charge:	81 nC
Rds On - Drain-Source Resistance:	2.3 mOhms
Rise Time:	3 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Unit Weight:	2 g

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.