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CSD23202W10T

Name: Texas Instruments CSD23202W10T
Brand: Texas Instruments
SKU: 595-CSD23202W10T
Price: 1.35 EUR
Availability: InStock

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Mouser No:

595-CSD23202W10T

Mfr. No:

CSD23202W10T

Mfr.:

Texas Instruments

Description:

MOSFETs 12V PCH NexFET A 595 -CSD23202W10 A 595- A 595-CSD23202W10

Datasheet:

CSD23202W10T Datasheet

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More Information

Learn more about Texas Instruments CSD23202W10T

In Stock: 1,884

Stock:: 1,884 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€1.35	€1.35
	€0.855	€8.55
	€0.436	€43.60
Full Reel (Order in multiples of 250)
	€0.436	€109.00
	€0.396	€198.00
	€0.373	€373.00
	€0.37	€925.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD23202W10

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

€0.53

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD23202W10

Description:

MOSFETs 12V P-channel NexFET Pwr MOSFET A 595-CS A 595-CSD23202W10T

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DSBGA-4
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	2.2 A
Rds On - Drain-Source Resistance:	92 mOhms
Vgs - Gate-Source Voltage:	- 6 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	600 mV
Qg - Gate Charge:	2.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	21 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	CSD23202W10
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	1 mg

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

NexFET P-Channel Power MOSFETs

Texas Instruments NexFET P-Channel Power MOSFETs are designed to deliver the lowest on-resistance and gate charge in a small outline with excellent thermal characteristics in an ultra-low profile. These Texas Instruments NexFET MOSFETs feature ultra-low on-resistance, ultra-low Q_g and Q_gd, and a small footprint of 1.0mm x 1.5mm.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.