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CSD25485F5

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See Product Specifications

Mouser No:

595-CSD25485F5

Mfr. No:

CSD25485F5

Mfr.:

Texas Instruments

Description:

MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25485F5T

Datasheet:

CSD25485F5 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD25485F5

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PICOSTAR-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3.2 A
Rds On - Drain-Source Resistance:	250 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Qg - Gate Charge:	3.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.4 W
Channel Mode:	Enhancement
Tradename:	PicoStar
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	14 ns
Forward Transconductance - Min:	7 S
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	CSD25485F5
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	14 ns
Unit Weight:	0.700 mg

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Technical Resources

CSD25485F5 TINA-TI Reference Design

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.