DRV8300UDIPWR

Name: Texas Instruments DRV8300UDIPWR
Brand: Texas Instruments
SKU: 595-DRV8300UDIPWR
Price: 1.35 EUR
Availability: InStock

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Mouser No:

595-DRV8300UDIPWR

Mfr. No:

DRV8300UDIPWR

Mfr.:

Texas Instruments

Description:

Motor/Motion/Ignition Controllers & Drivers 100-V max simple th ree-phase gate drive

Datasheet:

DRV8300UDIPWR Datasheet

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In Stock: 2,955

Stock:: 2,955 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€1.35	€1.35
	€0.972	€9.72
	€0.877	€21.93
	€0.746	€74.60
	€0.674	€168.50
	€0.643	€321.50
	€0.562	€562.00
Full Reel (Order in multiples of 3000)
	€0.425	€1,275.00
	€0.415	€2,490.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Motor/Motion/Ignition Controllers & Drivers
RoHS:
Product:	Brushless DC Motor Controllers
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Mounting Style:	SMD/SMT
Package/Case:	TSSOP-20
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Moisture Sensitive:	Yes
Number of Outputs:	1 Output
Product Type:	Motor / Motion / Ignition Controllers & Drivers
Series:	DRV8300U
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs

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Datasheet

DRV8300UDIPWR Datasheet

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CNHTS:: 8542319099
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

DRV8300U Three-Phase Gate Driver

Texas Instruments DRV8300U Three-Phase Gate Driver is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.