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UCC21710DW

Name: Texas Instruments UCC21710DW
Brand: Texas Instruments
SKU: 595-UCC21710DW
Price: 6.93 EUR
Availability: InStock

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See Product Specifications

Mouser No:

595-UCC21710DW

Mfr. No:

UCC21710DW

Mfr.:

Texas Instruments

Description:

Galvanically Isolated Gate Drivers 5.7kVrms +/-10A sin gle-channel-isolated A 595-UCC21710DWR

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

UCC21710DW Datasheet

ECAD Model:

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In Stock: 270

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€6.93	€6.93
	€5.37	€53.70
	€4.82	€120.50
	€4.50	€540.00
	€4.32	€1,209.60
	€4.21	€2,189.20
	€4.12	€4,120.00
	€4.02	€10,130.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Galvanically Isolated Gate Drivers
RoHS:
Series:	UCC21710
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Propagation Delay - Max:	130 ns
Rise Time:	33 ns
Fall Time:	27 ns
Packaging:	Tube
Brand:	Texas Instruments
Configuration:	Inverting, Non-Inverting
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	10 A
Product:	Isolated Gate Drivers
Product Type:	Galvanically Isolated Gate Drivers
Factory Pack Quantity:	40
Subcategory:	PMIC - Power Management ICs
Supply Voltage - Max:	5.5 V
Supply Voltage - Min:	3 V
Technology:	SiC

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Datasheet

UCC21710DW Datasheet

Application Notes

EOL

Product Discontinuance Notification 2024-03-01 (PDF)

PCN

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

UCC21710/UCC21710-Q1 Isolated Gate Driver

Texas Instruments UCC21710/UCC21710-Q1 Isolated Gate Driver is a galvanically isolated single-channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710/UCC21710-Q1 has up to ±10A peak source and sink current. The input side is isolated from the output side with SiO₂ capacitive isolation technology, supporting up to 1.5kV_RMS working voltage with an isolation barrier life of longer than 40 years, 12.8kV_PK surge immunity, as well as providing low part-to-part skew, and >150V/ns common-mode noise immunity (CMTI).