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C3M0032120K

Name: Wolfspeed C3M0032120K
Brand: Wolfspeed
SKU: 941-C3M0032120K
Price: 11.4 EUR
Availability: OutOfStock

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Mouser No:

941-C3M0032120K

Mfr. No:

C3M0032120K

Mfr.:

Wolfspeed

Description:

SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET

Datasheet:

C3M0032120K Datasheet

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€11.40	€11.40
	€6.74	€67.40
	€6.54	€784.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	63 A
Rds On - Drain-Source Resistance:	32 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 15 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	118 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	283 W
Channel Mode:	Enhancement
Brand:	Wolfspeed
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	9 ns
Forward Transconductance - Min:	27 S
Packaging:	Tube
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	18 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	6 g

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Datasheet

C3M0032120K Datasheet

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

1200V Silicon Carbide Schottky Diodes

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1200V Silicon Carbide Power MOSFETs

Wolfspeed 1200V Silicon Carbide Power MOSFETs set the standard for performance, ruggedness and ease of design. Wolfspeed MOSFETs feature fast switching and low switching loss capabilities, ensuring significant improvement in system efficiency, power density and overall BOM cost compared to silicon MOSFET and IGBT incumbents.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

C3M0032120K Silicon Carbide Power MOSFETs

Wolfspeed C3M0032120K Silicon Carbide Power MOSFETs are designed using C3M™ MOSFET Technology. The C3M0032120K features a 1200V V_DS, a 63A I_D, and a 32 R_DS(on). The power MOSFETs reduce switching losses and minimise gate ringing. The devices have a fast intrinsic diode with low reverse recovery (Qrr). The C3M0032120K MOSFETs offer increased power density and system switching frequency, with reduced cooling requirements. The C3M0032120K are ideal for solar inverters, EV motor drives, high voltage DC/DC converters, switched mode power supplies, and load switches.

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