DMN53D0U-7

Diodes Incorporated
621-DMN53D0U-7
DMN53D0U-7

Mfr.:

Description:
MOSFETs N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1Vgs

Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
40 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
€0.267 €0.27
€0.157 €1.57
€0.101 €10.10
€0.071 €35.50
€0.069 €69.00
Full Reel (Order in multiples of 3000)
€0.046 €138.00
† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-23-3
N-Channel
1 Channel
50 V
300 mA
2 Ohms
- 12 V, 12 V
400 mV
600 pC
- 55 C
+ 150 C
520 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand: Diodes Incorporated
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 14 ns
Product Type: MOSFETs
Rise Time: 2.8 ns
Series: DMN53
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 21 ns
Typical Turn-On Delay Time: 2.1 ns
Unit Weight: 8 mg
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Attributes selected: 0

TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
8541210101
KRHTS:
8541219000
MXHTS:
85412101
ECCN:
EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMN53xx N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON) while maintaining superior switching performance. ESD protected to 2KV, these new generation MOSFETs feature low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speeds, and low input/output leakage. Qualified to AEC-Q101 Standards for High Reliability, DMN53xx N-Channel Enhancement Mode MOSFETs are ideal for high-efficiency power management applications.

DMNxx MOSFETs

Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.

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