FM25V10-DG

Infineon Technologies
727-FM25V10-DG
FM25V10-DG

Mfr.:

Description:
F-RAM FRAM

ECAD Model:
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In Stock: 88

Stock:
88 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€14.91 €14.91
€13.84 €138.40
€13.40 €335.00
€13.08 €654.00
€12.75 €1,275.00
€12.16 €3,040.00
€11.62 €4,299.40
1,110 Quote

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
1 Mbit
SPI
25 MHz, 40 MHz
128 k x 8
DFN-8
2 V
3.6 V
- 40 C
+ 85 C
FM25V10-G
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 2 V to 3.6 V
Product Type: FRAM
Factory Pack Quantity: 370
Subcategory: Memory & Data Storage
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Attributes selected: 0

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CNHTS:
8542329090
USHTS:
8542320071
ECCN:
EAR99

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.