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IPB068N20NM6ATMA1

Name: Infineon IPB068N20NM6ATMA1
Brand: Infineon Technologies
SKU: 726-IPB068N20NM6ATMA
Price: 7.03 EUR
Availability: InStock

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Mouser No:

726-IPB068N20NM6ATMA

Mfr. No:

IPB068N20NM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >150 - 400V

Datasheet:

IPB068N20NM6ATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IPB068N20NM6ATMA1

In Stock: 1,550

Stock:: 1,550 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€7.03	€7.03
	€4.83	€48.30
	€3.70	€370.00
	€3.62	€1,810.00
Full Reel (Order in multiples of 1000)
	€3.38	€3,380.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	134 A
Rds On - Drain-Source Resistance:	6.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.7 V
Qg - Gate Charge:	73 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	29 ns
Forward Transconductance - Min:	32 S
Product Type:	MOSFETs
Rise Time:	56 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	17 ns
Part # Aliases:	IPB068N20NM6 SP005562848

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Datasheet

IPB068N20NM6ATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.

OptiMOS™ 6 200V Power MOSFETs

Infineon Technologies OptiMOS™ 6 200V Power MOSFETs are N-channel normal level MOSFETs available in PG-TO263-3, PG-TO220-3, and PG-HDSOP-16 packages. These MOSFETs feature excellent gate charge x R_DS(on) product (FOM), very low reverse recovery charge (Q_rr), and low on‑resistance R_DS(on). The OptiMOS™ 6 200V MOSFETs operate at 175°C temperature. These MOSFETs are halogen‑free according to IEC61249‑2‑21 and Moisture Sensitivity Level (MSL 1) classified according to J‑STD-020 standards. The OptiMOS™ 6 200V MOSFETs are ideal for renewables, motor control, audio amplifiers, and industrial applications.