+44 (0) 1494-427500

Part of the TTI Family of Specialists Contact Mouser (UK) +44 (0) 1494-427500 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

ISC040N10NM7ATMA1

Name: Infineon ISC040N10NM7ATMA1
Brand: Infineon Technologies
SKU: 726-ISC040N10NM7ATMA
Price: 2.22 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-ISC040N10NM7ATMA

Mfr. No:

ISC040N10NM7ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 PowerTransistor, 100 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISC040N10NM7ATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies ISC040N10NM7ATMA1

In Stock: 827

Stock:: 827 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€2.22	€2.22
	€1.43	€14.30
	€1.01	€101.00
	€0.857	€428.50
	€0.742	€742.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	130 A
Rds On - Drain-Source Resistance:	4 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	39 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	4.4 ns
Forward Transconductance - Min:	55 S
Product Type:	MOSFETs
Rise Time:	3.3 ns
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17.2 ns
Typical Turn-On Delay Time:	9.4 ns
Part # Aliases:	ISC040N10NM7 SP006167253

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

ISC040N10NM7ATMA1 Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOM_oss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.