KTDM4G4B626BGIEAT

SMARTsemi
473-M4G4B626BGIEAT
KTDM4G4B626BGIEAT

Mfr.:

Description:
DRAM DRAM DDR4 4GB 256MX16 2666Mbps 1.2V 96-FBGA Industrial

Datasheet:
ECAD Model:
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Learn more about SMARTsemi KTDM4G4B626BGIEAT

Availability

Stock:
Non-Stocked
Factory Lead Time:
3 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€10.05 €10.05
€9.34 €93.40
€9.06 €226.50
€8.84 €442.00
€8.62 €862.00
€8.34 €1,651.32
€8.13 €4,829.22
€7.92 €9,408.96
2,574 Quote

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR4
4 Gbit
16 bit
1.333 GHz
FBGA-96
256 M x 16
1.14 V
1.26 V
- 40 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 198
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR4 Memory ICs

SMARTsemi DDR4 Memory ICs feature a power supply (JEDEC standard 1.2V) of VDD = 1.2V ± 5%, and VPP = 2.375V to 2.75V. The ICs have up to 8 banks (4 banks x 2 bank groups) for x 16 products. The DDR4 feature a Pseudo Open Drain (POD) interface with a Burst Length (BL) of 8 and 4 with Burst Chop (BC).

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