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RGS50TSX2DGC11

Name: ROHM Semiconductor RGS50TSX2DGC11
Brand: ROHM Semiconductor
SKU: 755-RGS50TSX2DGC11
Price: 7.93 EUR
Availability: InStock

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Mouser No:

755-RGS50TSX2DGC11

Mfr. No:

RGS50TSX2DGC11

Mfr.:

ROHM Semiconductor

Description:

IGBTs 10 s Short-Circuit Tolerance, 1200V 25A, FRD Built-in, Field Stop Trench IGBT

Datasheet:

RGS50TSX2DGC11 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RGS50TSX2DGC11

In Stock: 238

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€7.93	€7.93
	€4.88	€48.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247N-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.1 V
Maximum Gate Emitter Voltage:	30 V
Continuous Collector Current at 25 C:	50 A
Pd - Power Dissipation:	395 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Gate-Emitter Leakage Current:	500 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	450
Subcategory:	IGBTs
Part # Aliases:	RGS50TSX2D

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Datasheet

RGS50TSX2DGC11 Datasheet (PDF)

PCN

Product Change Notification 2024-10-15 (PDF)

Specification Sheets

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

RGSx0TSX2x Field Stop Trench IGBTs

ROHM Semiconductor RGSx0TSX2x Field Stop Trench IGBTs are 10µs SCSOA (Short Circuit Safety Operating Area) guaranteed Insulated Gate Bipolar Transistors, suitable for general inverter, UPS, PV inverters, and power conditioner applications. The RGSx0TSX2x IGBTs offer low conduction loss that contributes to reduced size and improved efficiency. These devices utilize original trench-gate and thin-wafer technologies. These technologies help achieve low collector-emitter saturation voltage (V_CE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.