SI8483DB-T2-E1

Vishay Semiconductors
78-SI8483DB-T2-E1
SI8483DB-T2-E1

Mfr.:

Description:
MOSFETs -12V Vds 10V Vgs MICRO FOOT 1.5 x 1

Datasheet:
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Learn more about Vishay Semiconductors SI8483DB-T2-E1

In Stock: 32,364

Stock:
32,364 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
€0.851 €0.85
€0.44 €4.40
€0.317 €31.70
€0.27 €135.00
€0.247 €247.00
Full Reel (Order in multiples of 3000)
€0.216 €648.00
† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
MicroFoot-6
P-Channel
1 Channel
12 V
16 A
22 mOhms
- 10 V, 10 V
800 mV
65 nC
- 55 C
+ 150 C
13 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 10 ns
Forward Transconductance - Min: 10 S
Product Type: MOSFETs
Rise Time: 25 ns
Series: SI8
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 128.380 mg
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.

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