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SISS52DN-T1-GE3

Name: Vishay SISS52DN-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SISS52DN-T1-GE3
Price: 1.46 EUR
Availability: InStock

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Mouser No:

78-SISS52DN-T1-GE3

Mfr. No:

SISS52DN-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PPAK1212 N-CH 30V 47.1A

Datasheet:

SISS52DN-T1-GE3 Datasheet

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In Stock: 4,052

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€1.46	€1.46
	€0.937	€9.37
	€0.623	€62.30
	€0.491	€245.50
	€0.449	€449.00
Full Reel (Order in multiples of 3000)
	€0.418	€1,254.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK1212-8S
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	162 A
Rds On - Drain-Source Resistance:	1.2 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	65 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	57 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	6 ns
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	SISS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N - Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	12 ns

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Datasheet

SISS52DN-T1-GE3 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TrenchFET® Gen V Power MOSFETs with VDS

Vishay / Siliconix TrenchFET^® Gen V Power MOSFETs increase power conversion efficiency with a very low R_DS x Q_g figure-of-merit (FOM). The Gen V Power MOSFETs have 80V, 100V, and 150V drain-source breakdown voltage options. The Gen V Power MOSFETs are available in a PowerPAK^® 1212-8SH or PowerPAK SO-8 single package.

SiSS52DN & SiSS54DN N-Ch TrenchFET® Gen V MOSFETs

Vishay / Siliconix SiSS52DN and SiSS54DN N-Channel TrenchFET Gen V Power MOSFETs enable higher power density with very low R_DS(on). These power MOSFETs offer 30V V_DS and very low R_DS x Q_g Figure-of-Merit (FOM). The Vishay / Siliconix SiSS52DN N-Channel MOSFET typically features 162A I_D and 19.9nC Q_g. Meanwhile, the SiSS54DN N-Channel MOSFET typically features 185.6A I_D and 21nC Q_g. This 100% R_g and Unclamped Inductive Switching (UIS) tested MOSFET comes in a thermally enhanced compact PowerPAK® 1212-8S package with a single configuration. Typical applications include DC/DC converters, Point-of-Loads (POLs), synchronous rectification, power and load switches, and battery management.