It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

STL120N10F8

Name: STMicroelectronics STL120N10F8
Brand: STMicroelectronics
SKU: 511-STL120N10F8
Price: 2.23 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STL120N10F8

Mfr. No:

STL120N10F8

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Channel Enhancement Mode Standard Level 100V, 4.6mohm max, 125A STripFET F8

Complete Your Design

Datasheet:

STL120N10F8 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STL120N10F8

In Stock: 4,744

Stock:: 4,744

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 3,000
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€2.23	€2.23
	€1.44	€14.40
	€0.989	€98.90
	€0.79	€395.00
	€0.749	€749.00
Full Reel (Order in multiples of 3000)
	€0.737	€2,211.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-5x6-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	125 A
Rds On - Drain-Source Resistance:	4.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	SG
Fall Time:	17 ns
Product Type:	MOSFETs
Rise Time:	16 ns
Series:	STripFET F8
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	41 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	76 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STL120N10F8 Datasheet (PDF)

Other

AUTOMOTIVE STripFET F8 DEVICES: For high-power-density solutions (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

STripFET F8 N-Channel Power MOSFETs

STMicroelectronics STripFET F8 N-Channel Power MOSFETs are AEC-Q101 qualified and offer a comprehensive package solution from 30V to 150V to meet all the requirements for very high-power-density solutions. These low-voltage MOSFETs feature STPOWER STripFET F8 technology. STripFET F8 technology saves energy and ensures low noise in power conversion, motor control, and power distribution circuits by cutting both on-resistance and switching losses while optimizing body-diode properties. The STMicroelectronics STripFET F8 N-Channel Power MOSFETs simplify system designs and increase efficiency in applications such as automotive, computer / peripherals, data centers, telecom, solar, power supplies / converters, battery chargers, home / professional appliances, gaming, drones, and more.

STL120N10F8 100V N-Channel STripFET MOSFET

STMicroelectronics STL120N10F8 100V N-Channel Enhancement Mode STripFET MOSFET utilizes ST's STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. The STMicroelectronics STL120N10F8 is ideal for switching applications.