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TK095U65Z5,RQ

Name: Toshiba TK095U65Z5,RQ
Brand: Toshiba
SKU: 757-TK095U65Z5RQ
Price: 6.03 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TK095U65Z5RQ

Mfr. No:

TK095U65Z5,RQ

Mfr.:

Toshiba

Description:

MOSFETs N-ch MOSFET, 650 V, 0.095 O@10V, TOLL, DTMOS?

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK095U65Z5,RQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TK095U65Z5,RQ

In Stock: 2,000

Stock:: 2,000

Can Dispatch Immediately

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On Order:: 2,000
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€6.03	€6.03
	€4.08	€40.80
	€3.03	€303.00
	€2.94	€2,940.00
Full Reel (Order in multiples of 2000)
	€2.83	€5,660.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TOLL-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	95 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	50 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	230 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	17 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	95 ns
Typical Turn-On Delay Time:	50 ns

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Datasheet

TK095U65Z5,RQ Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.