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UJ3N065025K3S

Name: onsemi UJ3N065025K3S
Brand: onsemi
SKU: 431-UJ3N065025K3S
Price: 17.61 EUR
Availability: InStock

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Mouser No:

431-UJ3N065025K3S

Mfr. No:

UJ3N065025K3S

Mfr.:

onsemi

Description:

JFETs 650V/25MOSICJFETG3TO2

Datasheet:

UJ3N065025K3S Datasheet

ECAD Model:

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In Stock: 610

Stock:: 610 Can Dispatch Immediately

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Factory Lead Time:: 31 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€17.61	€17.61
	€14.09	€140.90

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	JFETs
RoHS:
Technology:	SiC
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Configuration:	Single
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	85 A
Rds On - Drain-Source Resistance:	25 mOhms
Pd - Power Dissipation:	441 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	UJ3N
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	JFETs
Factory Pack Quantity:	600
Subcategory:	Transistors
Tradename:	SiC JFET
Unit Weight:	9.594 g

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Datasheet

UJ3N065025K3S Datasheet

Models

SPICE Model/UJ3N065025K3S (Text)

PCN

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TARIC:: 8541210000
CNHTS:: 8541290000
USHTS:: 8541290055
ECCN:: EAR99

UJ3N Normally-On JFET Transistors

onsemi UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (R_DS(ON)), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low R_DS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes," giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.