GP3T080A120H

SemiQ
148-GP3T080A120H
GP3T080A120H

Mfr.:

Description:
SiC MOSFETs Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about SemiQ GP3T080A120H

In Stock: 74

Stock:
74 Can Dispatch Immediately
Factory Lead Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€4.56 €4.56
€3.30 €33.00
€2.37 €284.40
€2.17 €1,106.70

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4L
N-Channel
1 Channel
1.2 kV
70 A
100 mOhms
- 4.5 V, + 18 V
4 V
53 nC
- 55 C
+ 175 C
147 W
Enhancement
Brand: SemiQ
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 9 ns
Forward Transconductance - Min: 6 S
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 4 ns
Series: GP3T
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 13 ns
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Attributes selected: 0

Datasheet

USHTS:
8541100080
ECCN:
EAR99

GEN3 1200V SiC MOSFET Discrete Devices

SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.

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