6ED2230S12TXUMA1

Infineon Technologies
726-6ED2230S12TXUMA1
6ED2230S12TXUMA1

Mfr.:

Description:
Gate Drivers 1200V, 0.65A 3-Phase BSD, OCP, EN & FAUL

Datasheet:
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In Stock: 267

Stock:
267 Can Dispatch Immediately
Factory Lead Time:
3 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€3.80 €3.80
€2.84 €28.40
€2.55 €63.75
€2.33 €233.00
€2.18 €545.00
€2.11 €1,055.00
Full Reel (Order in multiples of 1000)
€2.02 €2,020.00
€2.00 €4,000.00
€1.97 €9,850.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
IGBT, MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
DSO-24
6 Driver
6 Output
650 mA
13 V
20 V
Inverting
35 ns
20 ns
- 40 C
+ 125 C
Infineon SOI
Reel
Cut Tape
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Logic Type: CMOS
Maximum Turn-Off Delay Time: 600 ns
Maximum Turn-On Delay Time: 600 ns
Moisture Sensitive: Yes
Operating Supply Current: 175 uA
Pd - Power Dissipation: 1.3 W
Product Type: Gate Drivers
Propagation Delay - Max: 900 ns
Shutdown: Shutdown
Factory Pack Quantity: 1000
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: EiceDRIVER
Part # Aliases: 6ED2230S12T SP001656578
Unit Weight: 807.300 mg
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Datasheet

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CNHTS:
8542399000
USHTS:
8542310075
ECCN:
EAR99

6ED223xS12T EiceDRIVER™ Gate Driver ICs

Infineon Technologies 6ED223xS12T EiceDRIVER™ Level Shift Gate Driver ICs are high voltage (up to 1200V), high-speed insulated-gate bipolar transistors (IGBTs) with three independent high-side and low-side referenced output channels for three-phase applications. Proprietary HVIC and latch-immune CMOS technologies enable a ruggedized monolithic construction. Logic input is compatible with standard CMOS or TTL outputs, down to 3.3V logic. This resistor can also derive an over‐current protection (OCP) function that terminates all six outputs.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

1200V Level-Shift Gate Drivers

Infineon 1200V Level-Shift Gate Drivers for Industrial Drives include 3-phase, half-bridge, and high and low side drivers suitable for IGBTs or MOSFETs. The 6ED2230S12T 3-phase 1200V SOI driver with integrated Bootstrap Diode (BSD) and overcurrent protection utilizes Infineon's unique Silicon-on-Insulator (SOI) level-shift technology. The 6ED2230S12T provides functional isolation with industry-leading negative VS robustness. It also provides reduced level-shift losses with the integrated bootstrap diode enabling a lower bill of material cost and smaller PCB footprint.

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